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本文回顾了碳化硅单晶材料的发展历程和研究现状。主要讨论了物理气相传输法、高温化学气相沉积法(HTCVD)、液相法等SiC晶体生长方法,针对每种生长方法,阐述了其生长原理及研究现状。
Abstract：The history and the research status of SiC single crystal materials were reviewed. The SiC crystal growth method such as physical vapor transport method,HTCVD growth method and liquid phase method were discussed,for each growth method,the growth principle and research status of SiC single crystals were expounded.
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基本信息:
中图分类号:O782
引用信息:
[1]刘春俊.SiC单晶生长技术研究现状[J],2017,No.391(10):18-21.
基金信息:
北京市科技计划项目(D171100004517001);; 北京市科技新星项目(Z171100001117068)